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How To UNROOT Galaxy S3, Reset Flash Counter and Bring the Warranty back


WARNING :


  • Backup your data because all data on your device will be deleted
  • Use this AT YOUR OWN RISK !

Requirements :

  • Charged and Rooted Samsung galaxy S3
  • Installed "Triangle Away" App on SGS3 (Download from google play store)
  • Official firmware (Download from SamMobile.com)
  • Odin
  • Installed "Samsung Kies" or "Samsung Mobile driver" on PC


Steps :


- Backup your data ...


1- Download and install "Triangle Away" App from GP store https://tiny.cc/y68grw 

Or from XDA thread https://tiny.cc/ekahrw thanks to "Chainfire"


2- Open "Triangle Away" ... it will ask for download some data Hit "Download" and wait ... 

You should see this message like this "Please confirm your device is this exact model GT-I9300"


3- Hit continue


4- Hit "Reset flash counter" and "Continue"


Your device will restart into special mode


5- Volume up to continue


6- While rebooting ... Remove the battery and back it again


7- Start your device into "Download mode" (Volume Down + Home + Power)


8- Volume up to continue


- If you don't know how to flash FW by Odin ... you can watch it here :


www.youtube.com/watch?v=OqinDlH4hII


- After the flashing and configuration process finish


9- Unplug USB cable , Remove the battery and back it again


10- Start your device into "Recovery mode" (Volume UP + Home + Power)


11- Choose "Wipe data/factory reset" then "Yes" and wait ...


12- Choose "Wipe cache partition" then "Reboot system now"


Done !


Now check your "Device status" , It should be "Normal" :)


Downloads :


 

Updated :


16 Feb 2013 : Samsung Mobile Driver Ver-1.5.18.0


17 Feb 2013 : Samsung Kies Ver-2.5.2.13021_10

 

Notes :

  • Triangle Away may unmount your SD card , you can mount it from storage settings
  • New devices like SGS3/SGNote2/SGNote10.1, status can only be reset on some FW - they must be official firmwares !
  • This process works for various Samsung galaxy devices like (S3/2,Note1/2/10.1",Tab)
  • It does work on some (not all) stock firmwares. 
  • Resetting counter value doesn't work on custom firmwares
  • Some devices set the counter to 1 at every boot if you are running a custom kernel or recovery


On these devices, Triangle Away may always display 1, 
make sure to check the counter in actual download mode

 

All Credits goes to "MrW0000lf" on YouTube.



Samsung has recently started mass producing 16GB memory chips for use in data storage. The flash memory device has greatly improved from its inception up to the present as able to store kilobytes to Gigabytes of data. These 16GB chips may be combined together to create bigger flash memory in a smaller, more compact device.


Samsung plans to increase their production of 128-GB flash memory cards, which will utilize multi-level cell technology that can potentially make these memory cards more affordable. Samsung plans to produce plenty of these flash memory chips, despite ongoing debate on their durability as compared to single-level cell units.


They also plan to produce cards with densities that exceed 500GB. However, there is no news as to whether or not Samsung will use the same technology to increase the internal memory of their numerous Android devices. Time will come when mobile and tablet manufacturers will take their devices' memory capacities to the next level and for that we can't wait.


Source: Samsung


 

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first three-dimensional (3D) vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. The new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).


Samsung's new V-NAND offers a 128Gb density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D charge trap flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.


See press release below:


SEOUL, South Korea-(BUSINESS WIRE)-Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).


"Following the world's first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry."


Samsung's new V-NAND offers a 128 gigabit (Gb) density in a single chip, utilizing the company's proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array. By applying both of these technologies, Samsung's 3D V-NAND is able to provide over twice the scaling of 20nm-class* planar NAND flash.


"The new 3D V-NAND flash technology is the result of our employees' years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology," said Jeong-Hyuk Choi, senior vice president, flash product & technology, Samsung Electronics. "Following the world's first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry."


For the past 40 years, conventional flash memory has been based on planar structures that make use of floating gates. As manufacturing process technology has proceeded to the 10nm-class* and beyond, concern for a scaling limit arose, due to the cell-to-cell interference that causes a trade-off in the reliability of NAND flash products. This also led to added development time and costs.


Samsung's new V-NAND solves such technical challenges by achieving new levels of innovation in circuits, structure and the manufacturing process through which a vertical stacking of planar cell layers for a new 3D structure has been successfully developed. To do this, Samsung revamped its CTF architecture, which was first developed in 2006. In Samsung's CTF-based NAND flash architecture, an electric charge is temporarily placed in a holding chamber of the non-conductive layer of flash that is composed of silicon nitride (SiN), instead of using a floating gate to prevent interference between neighboring cells.


By making this CTF layer three-dimensional, the reliability and speed of the NAND memory have improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.


Also, one of the most important technological achievements of the new Samsung V-NAND is that the company's proprietary vertical interconnect process technology can stack as many as 24 cell layers vertically, using special etching technology that connects the layers electronically by punching holes from the highest layer to the bottom. With the new vertical structure, Samsung can enable higher density NAND flash memory products by increasing the 3D cell layers without having to continue planar scaling, which has become incredibly difficult to achieve.


After nearly 10 years of research on 3D Vertical NAND, Samsung now has more than 300 patent-pending 3D memory technologies worldwide. With the industry's first completely functional 3D Vertical NAND memory, Samsung has strengthened its competitiveness in the memory industry as well as set the foundation for more advanced products including one terabit (Tb) NAND flash, while setting a faster pace for industry growth.


According to IHS iSuppli, the global NAND flash memory market is expected to reach approximately US $30.8 billion in revenues by the end of 2016, from approximately US $23.6 billion in 2013 with a CAGR of 11 percent, in leading growth of the entire memory industry.


 


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