Yesterday, Samsung unveiled their range of Universal Flash Storage (UFS) 1.0 memory cards to the world and they will have significant advantages over micro-SD cards that we use now. These are specifically targeted towards D-SLR and 3D VR cameras, along with action cameras and even drones! Apart from the standard 32GB, 64GB and 128GB variants, the UFS 1.0 cards will offer even a 256GB variant.

If you are like us, you must be wondering what advantage it will give you over traditional micro-SD, when using it in a smartphone. The answer to that is better 3D gaming on phones that use their external memory as the first choice and faster, smoother 4K and VR media playback. The UFS card will read data at a speed of 530MBps, which will put it in the same category as a standard SATA Solid State Hard Disc used in full fledged computers! To give you an idea of the speed, consider the fact that the next time you are transferring a movie on to your UFS card, every GB of data will just take 2 seconds to write onto it. That's five times more than what micro-SD cards are capable of right now and very impressive.

Author: Saikat Kar (tech-enthusiast)

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Korean newspaper ETNews has outed a report citing a Samsung insider, who claims the company is going to use a next-gen NAND flash storage in the upcoming Samsung Galaxy S6. The storage technology in question is called UFS 2.0, which stands for Universal Flash Storage.

UFS can reach SSD-like transfer speeds, but is cheap to manufacture like eMMC memory chips. In fact, it's three times faster than eMMC memory with a transfer speed of up to 1.2GB/s. Power consumption is lower than eMMC storage, which won't lead to battery drains or overheating. Recent UFS 2.0 technology development has lead to half the power consumption of eMMC 5.0, the source says.

The standard is established under the Joint Electron Device Engineering Council (JEDEC) initiative by Samsung, Nokia and Micron in 2007. Toshiba and SK Hynix are also involved in the development of the UFS 2.0 memory. Samsung is expected to start mass producing the new NAND flash storage in the coming weeks.

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